CHA3092

Ref. :DSCHA30920356 21-Dec.-00

1/7

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

20-33GHz Medium Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA3092 is a high gain broadband four-

stage monolithic medium power amplifier. It is

designed for a wide range of applications, from

military

to

commercial

communication

systems. The backside of the chip is both RF

and

DC

grounds.

This

helps

simplify the

assembly process.

A B.I.T. ( Build In Test ) monitors a DC voltage

that is representative of the microwave output

power.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

■ Broadband performances : 20-33GHz

■ 20dBm output power.

■ 22dB ±1.0dB gain

■ Very good broadband input matching

■ On chip output power level DC detector

■ Low DC power consumption, 300mA @ 3.5V

■ Chip size :

0.88 X 1.72 X 0.10 mm

Vg1

Vg2

Vg3,4

Vdet

Vd2,3,4

Vd1

IN

OUT

DI

Typical on wafer measurements :

Input Rloss : solid line & output Rloss : dash line.

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

20

33

GHz

G

Small signal gain

20

22

dB

P03

Output power at 3dB gain compression

20

23

dBm

Bias current

300

400

mA

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !