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CHR2295 Datasheet(PDF) 1 Page - United Monolithic Semiconductors |
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CHR2295 Datasheet(HTML) 1 Page - United Monolithic Semiconductors |
1 / 6 page CHR2295 RoHS COMPLIANT Ref. : DSCHR22951201 -20-July-01 1/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24-30GHz Integrated Down Converter GaAs Monolithic Microwave IC Description The CHR2295 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features • Broadband performances : 24-30GHz • 11 dB conversion gain • 3.5.0dB noise figure • 10dBm LO input power • -10dBm RF input power (1dB gain comp.) • Low DC power consumption, 120mA@3.5V • Chip size : 2.49 X 1.97 X 0.10 mm -24.00 -20.00 -16.00 -12.00 -8.00 -4.00 0.00 4.00 8.00 12.00 22.5 23.5 24.5 25.5 26.5 27.5 28.5 29.5 30.5 31.5 32.5 2XLO Frequency (GHz) Gc_channel_sup_rf+ Gc_channel_inf_rf+ Gc_channel inf_rf- Gc_channel_sup_rf- Conversion Gain & Image suppression @ IF=1.5GHz (including test board losses) Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit FRF RF frequency range 24 30 GHz FLO LO frequency range 12 15 GHz FIF IF frequency range 0.25 1.5 GHz Gc Conversion gain 11 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! LO Q I GM GB VDM VDL GX VGA RF |
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Similar Description - CHR2295 |
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