ATP302

No. A1654-1/4

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

's products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer

's

products or equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Features

•

Avalanche resistance guarantee.

•

Halogen free compliance.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--60

V

Gate-to-Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

--70

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

--280

A

Allowable Power Dissipation

PD

Tc=25°C70

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

197

mJ

Avalanche Current *2

IAV

--42

A

Note :

*1 VDD=--36V, L=100μH, IAV=--42A

*2 L≤100μH, Single pulse

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--60

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--60V, VGS=0V

--10

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--1.2

--2.6

V

Forward Transfer Admittance

| yfs |

VDS=--10V, ID=--35A

75

S

Marking : ATP302

Continued on next page.

Ordering number : ENA1654

21710QA TK IM TC-00002247

SANYO Semiconductors

DATA SHEET

ATP302

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

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