CYStech Electronics Corp.

Spec. No. : C331LB

Issued Date : 2004.07.05

Revised Date :

Page No. : 1/3

1N581XLB

CYStek Product Specification

1.0Amp Silicon Schottky Barrier Rectifiers

1N581XLB Series

Features

• Low forward voltage drop

• High current capability

• High surge current capability

• High reliability

• Epitaxial construction

Mechanical Data

• Case: DO-41 Molded Plastic.

• Terminals: Axial leads, solderable per MIL-STD-202, Method 208 guaranteed

• Polarity: Color band denotes cathode end.

• Epoxy: UL 94V-0 rate flame retardant

• Mounting position: Any

• Weight: 0.34 grams

Maximum Ratings and Electrical Characteristics

Rating at 25

°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or

inductive load. For capacitive load, derate current by 20%.

Type Number

1N5817

1N5818

1N5819

Units

Maximum Recurrent Peak Reverse Voltage

20

30

40

V

Maximum RMS Voltage

14

21

28

V

Maximum DC Blocking Voltage

20

30

40

V

Maximum Average Forward Rectified Current

.375”(9.5mm) lead length at Ta=90

°C

1

A

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load(JEDEC method)

25

A

Maximum Instantaneous Forward Voltage @ 1.0A

0.45

0.55

0.6

V

Maximum DC Reverse Current at Rated DC

Blocking Voltage

1

(@Ta=25

°C)

10

(@Ta=100

°C)

mA

Typical Junction Capacitance (Note 1)

110

pF

Typical thermal resistance(Note 2)

80

℃

/W

Operating Temperature Range Tj

-65 to +125

°C

Storage Temperature Range Tstg

-65 to +150

°C

Notes : 1. Measured at 1 MHz and applied reverse voltage of 4.0Volts

2. Thermal resistance from junction to ambient, vertical PCB mounting, 0.5”(12.7mm) lead length.