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LSF872C1S Datasheet(PDF) 1 Page - Marktech Corporate |
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LSF872C1S Datasheet(HTML) 1 Page - Marktech Corporate |
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1 / 1 page  LSF872C1S Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) SYMBOL MIN TYP MAX UNIT PO 14.0 17.0 20.0 mW VF 1.55 2.0 V IR 10 μ A λ p 870 nm Δλ 45 nm θ ±25 deg. Junction Capacitance Cj 1MHz ,V=0V 50 pF P/T -0.3 %/℃ V/T -2.1 mV/℃ ① Anode ② Cathode FEATURES ･ High-output Power ･ Compact ･ High Reliability APPLICATIONS ･Optical Switches ･ Optical Sensors 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL UNIT IF mA IFP A VR V PD mW Topr ℃ Tstg ℃ Tj ℃ Tls ℃ *2:Time 5 Sec max,Position:Up to 3mm from the body Peak Wavelength Spectral Line Half Width Half Intensity Beam Angle Temp. Coefficient of PO Temp. Coefficient of VF I T E M Power Output Forward Voltage Reverse Current IF=10mA IF=10mA IF=50mA IF=50mA IF=50mA CONDITIONS IF=50mA IF=50mA VR=5V I T E M Forward Current (DC) Forward Current (Pulse)*1 Reverse Voltage Power Dissipation Operating Temp. Storage Temp. Junction Temp. 5 100 -20 TO 85 -30 TO 100 RATINGS Dimensions (Unit:mm) 60 0.5 100 260 Lead Soldering Temp.*2 *1:Tw=10uS,T=10mS THERMAL DERATING CURVE 0 20 40 60 80 100 120 -30 0 306090 AMBIENT TEMPERATURE(℃) FORWARD I-V CHARACTERISTICS 0 20 40 60 80 100 120 01 23 FORWARD VOLTAGE(V) POWER OUTPUT vs TEMPERATURE IF=10mA 0 20 40 60 80 100 120 140 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) SPECTRAL OUTPUT 0 20 40 60 80 100 120 770 870 970 WAVELENGTH(nm) RADIATION PATTERN 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 BEAM ANGLE(deg.) RELATIVE POWER vs FORWARD CURRENT 0 50 100 150 200 250 0 25 50 75 100 125 FORWARD CURRENT(mA) FORWARD VOLTAGE vs TEMPERATURE IF=10mA 1 1.1 1.2 1.3 1.4 1.5 1.6 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) OPTRANS 2006/5/24 To purchase this part contact Marktech Optoelectronics at 800.984.5337 Optoelectronics www.marktechopto.com Marktech |
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