MTB60N06J3 datasheet(2/7 Pages) CYSTEKEC

Part #	MTB60N06J3

Description	N -Channel Enhancement Mode Power MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C708J3

Issued Date : 2009.04.29

Revised Date :

Page No. : 2/7

MTB60N06J3

CYStek Product Specification

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

Rth,j-c

7.5

°C/W

Thermal Resistance, Junction-to-ambient, max

Rth,j-a

80

°C/W

Characteristics (Tc=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

60

-

V

VGS=0, ID=250μA

VGS(th)

1.0

2.0

3.2

V

VDS =VGS, ID=250μA

GFS *1

-

19

-

S

VDS =5V, ID=10A

IGSS

-

±

100

nA

VGS=±20, VDS=0

-

1

μA

VDS =48V, VGS =0

IDSS

-

25

μA

VDS =40V, VGS =0, Tj=125

°C

ID(ON) *1

12

-

A

VDS =10V, VGS =10V

-

53

60

mΩ

VGS =10V, ID=10A

RDS(ON) *1

-

80

96

mΩ

VGS =5V, ID=8A

Dynamic

Qg *1, 2

-

11

-

Qgs *1, 2

-

2.2

-

Qgd *1, 2

-

2.4

-

nC

ID=10A, VDS=20V, VGS=10V

td(ON) *1, 2

-

10

-

tr

*1, 2

-

7.5

-

td(OFF) *1, 2

-

18

-

tf *1, 2

-

6

-

ns

VDS=20V, ID=1A, VGS=10V,

RG=6Ω

Ciss

-

913

-

Coss

-

65

-

Crss

-

53

-

pF

VGS=0V, VDS=20V, f=1MHz

Rg

-

2.5

-

Ω

VGS=15mV, VDS=0, f=1MHz

Source-Drain Diode

IS *1

-

12

ISM *3

-

48

A

VSD *1

-

1.3

V

IF=IS, VGS=0V

trr

-

15

-

ns

Qrr

-

8

-

nC

IF=5A, dIF/dt=100A/μs

Note : *1.Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

Ordering Information

Device

Package

Shipping

Marking

MTB60N06J3

TO-252

(RoHS compliant & Halogen-free package)

2500 pcs / Tape & Reel

B60N06

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