MTC5806Q8 datasheet(3/9 Pages) CYSTEKEC

Part #	MTC5806Q8

Description	N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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3 / 9 page

CYStech Electronics Corp.

Spec. No. : C407Q8

Issued Date : 2008.12.02

Revised Date :

Page No. : 3/9

MTC5806Q8

CYStek Product Specification

P-Channel Electrical Characteristics (Tj=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

-55

-

V

VGS=0, ID=-250μA

VGS(th)

-1.0

-

-3.0

V

VDS=VGS, ID=-250μA

IGSS

-

±100

nA

VGS=±20V, VDS=0

-

-1

μA

VDS=-48V, VGS=0

IDSS

-

-10

μA

VDS=-40V, VGS=0, Tj=55

°C

-

70

90

ID=-3.5A, VGS=-10V

*RDS(ON)

-

100

135

m

Ω

ID=-3A, VGS=-4.5V

*GFS

-

9

-

S

VDS=-5V, ID=-3.5A

Dynamic

Ciss

-

630

-

Coss

-

81

-

Crss

-

33

-

pF

VDS=-30V, VGS=0, f=1MHz

*td(ON)

-

6

13

ns

*tr

-

8

18

*td(OFF)

-

17

31

*tf

-

11

20

ns

VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω

*Qg

-

11

15

*Qgs

-

2.1

-

*Qgd

-

2.5

-

nC

VDS=-27V, ID=-3.5A, VGS=-10V

Source-Drain Diode

*VSD

-

-1.0

V

VGS=0V, IS=-1.3A

*IS

-

-1.3

*ISM

-

-2.6

A

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

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