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MTN10N60E3 Datasheet(PDF) 2 Page - Cystech Electonics Corp.

Part # MTN10N60E3
Description  N-Channel Enhancement Mode Power MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTN10N60E3 Datasheet(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C406E3
Issued Date : 2008.12.02
Revised Date :2008.12.09
Page No. : 2/9
MTN10N60E3
CYStek Product Specification
Absolute Maximum Ratings (TC=25
°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage (Note 1)
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current
ID
10
A
Continuous Drain Current @TC=100
°C
ID
6
A
Pulsed Drain Current @ VGS=10V (Note 2)
IDM
40
A
Single Pulse Avalanche Energy @ L=10mH, ID=10 Amps, VDD=50V
EAS
484
Repetitive Avalanche Energy
EAR
21.6
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
3.0
V/ns
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
TL
300
°C
Maximum Temperature for Soldering @ Package Body for 10
seconds
TPKG
260
°C
W
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Pd
216
1.72
W/
°C
Operating Junction and Storage Temperature
Tj, Tstg -55~+150
°C
Note : *1
. TJ=+25℃ to +150℃.
*2
. Repetitive rating; pulse width limited by maximum junction temperature.
*3
. ISD=10A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃.
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
0.58
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
62
°C/W


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