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NCP1238BD65R2G Datasheet(PDF) 7 Page - ON Semiconductor |
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NCP1238BD65R2G Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 30 page NCP1238 http://onsemi.com 7 ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, VHV = 120 V, VCC = 11 V unless otherwise noted) Characteristics Unit Max Typ Min Symbol Test Condition LATCH−OFF INPUT High Threshold VLatch going up VOVP 2.37 2.5 2.63 V Low Threshold VLatch going down VOTP 0.76 0.8 0.84 V Current Source for Direct NTC Connection During normal operation During soft−start VLatch = 0 V INTC INTC(SSTART) 78 156 91 182 104 208 mA Blanking Duration on High Latch Detection tLatch(OVP) 40 55 70 ms Blanking Duration on Low Latch Detection tLatch(OTP) − 400 − ms Clamping Voltage ILatch = 0 mA ILatch = 1 mA Vclamp0(Latch) Vclamp1(Latch) 1.0 1.8 1.2 2.3 1.4 2.8 V TEMPERATURE SHUTDOWN Temperature Shutdown TJ going up TTSD 135 150 165 °C Temperature Shutdown Hysteresis TJ going down TTSD(HYS) 20 30 40 °C 6. Internal supply current only, current in FB pin not included (current flowing through GND pin only). |
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Similar Description - NCP1238BD65R2G |
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