GaAs HIGH POWER SIDE LOOK PACKAGE

INFRARED EMITTING DIODE

MIE-11RA2

Description

Package Dimensions

The MIE-11RA2 is a GaAs infrared emitting diode

molded in red , lensed side looking package .

The MIE-11RA2 provides a broad range of

intensity selection .

Features

l

Selected to specific on-line intensity and

radiant intensity ranges

l

Low cost, plastic side looking package

l

Mechanically and spectrally matched to

the MID-11422 of phototransistor .

Absolute Maximum Ratings

Parameter

Maximum Rating

Unit

Power Dissipation

75

mW

Peak Forward Current

1

A

Continuos Forward Current

50

mA

Reverse Voltage

5

V

Operating Temperature Range

-55

Storage Temperature Range

-55

Lead Soldering Temperature

260

02/04/2002

Unity Opto Technology Co., Ltd.

NOTES :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

2.54 NOM.

(.100)

0.76±0.10

(.030±.008)

1.55±0.02

(.061±.008)

4.45±0.20

(.175±.008)

(.087)

2.22

(.087)

1.0 MIN.

(.040)

0.5 TYP.

(.020)

Unit: mm ( inches )

SEE NOTE 3

1.22±0.10

(.048±.004)

C

A

5.72±0.2

(.225±.008)

12.7 MIN.

(.500)