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SSF3637 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF3637 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 5 page  SSF3637 DESCRIPTION G1 D1 D2 G2 S1 S2 The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Schematic diagram PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity SSF3637 SSF3637 SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -5 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM -20 A Maximum Power Dissipation PD 2.0 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 /W ℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 V Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA GENERAL FEATURES ● V = -30V,I DS D = -5A R < 87mΩ @ V DS(ON) GS=-4.5V R < 52mΩ @ V DS(ON) GS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ● Battery protection ● Load switch ● Power management SOP-8 top view ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 |
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