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TSM10N60CIC0 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM10N60CIC0 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page Preliminary TSM10N60 600V N-Channel Power MOSFET 1/6 Version: Preliminary ITO-220 General Description The TSM10N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● Low RDS(ON) 0.75Ω (Max.) ● Low gate charge typical @ 45nC (Typ.) ● Low Crss typical @ 20pF (Typ.) ● Fast Switching Ordering Information Part No. Package Packing TSM10N60CI C0 ITO-220 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Ta = 25ºC 9.5 A Continuous Drain Current Ta = 100ºC ID 5.8 A Pulsed Drain Current* IDM 38 A Avalanche Current (Single) (Note 2) IAS 9.5 A Single Pulse Avalanche Energy (Note 2) EAS 487 mJ Avalanche Current (Repetitive) (Note 1) IAR 38 A Repetitive Avalanche Energy (Note 1) EAR 14.5 mJ Maximum Power Dissipation @Ta = 25 oC PD 43 W Operating Junction Temperature TJ 150 ºC Storage Temperature Range TSTG -55 to +150 oC * Limited by maximum junction temperature PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 0.75 @ VGS =10V 4.75 Block Diagram N-Channel MOSFET Pin Definition: 1. Gate 2. Drain 3. Source |
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