Preliminary

TSM10N60

600V N-Channel Power MOSFET

1/6

Version: Preliminary

ITO-220

General Description

The TSM10N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half

bridge.

Features

●

●

Low gate charge typical @ 45nC (Typ.)

●

Low Crss typical @ 20pF (Typ.)

●

Fast Switching

Ordering Information

Part No.

Package

Packing

TSM10N60CI C0

ITO-220

50pcs / Tube

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Ta = 25ºC

9.5

A

Continuous Drain Current

Ta = 100ºC

5.8

A

Pulsed Drain Current*

38

A

Avalanche Current (Single) (Note 2)

9.5

A

Single Pulse Avalanche Energy (Note 2)

487

mJ

Avalanche Current (Repetitive) (Note 1)

38

A

Repetitive Avalanche Energy (Note 1)

14.5

mJ

Maximum Power Dissipation @Ta = 25

43

W

Operating Junction Temperature

150

ºC

Storage Temperature Range

-55 to +150

* Limited by maximum junction temperature

PRODUCT SUMMARY

600

4.75

Block Diagram

N-Channel MOSFET

Pin Definition:

1. Gate

2. Drain

3. Source