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TSM414K34 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM414K34 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 4 page  Preliminary TSM414K34 30V N-Channel MOSFET with Schottky Diode 2/4 Version: Preliminary MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1 1.4 3 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V IDSS -- -- 1.0 µA On-State Drain Current a VDS ≥ 5V, VGS = 10V ID(ON) 30 -- -- A VGS = 10V, ID = 4A -- 30 45 Drain-Source On-State Resistance a VGS = 4.5V, ID = 2A RDS(ON) -- 40 55 mΩ Forward Transconductance a VDS = 5V, ID = 4A gfs -- 20 -- S Diode Forward Voltage IS = 4A, VGS = 0V VSD -- 1 1.2 V Dynamic b Total Gate Charge Qg -- 13 -- Gate-Source Charge Qgs -- 4.2 -- Gate-Drain Charge VDS = 15V, ID = 4A, VGS = 10V Qgd -- 3.1 -- nC Input Capacitance Ciss -- 610 -- Output Capacitance Coss -- 100 -- Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz Crss -- 77 -- pF Switching c Turn-On Delay Time td(on) -- 9.1 -- Turn-On Rise Time tr -- 16.5 -- Turn-Off Delay Time td(off) -- 23 -- Turn-Off Fall Time VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V, RG = 6Ω tf -- 3.5 -- nS Schottky Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Forward Voltage Drop IF = 3A VFM -- -- 0.51 V VR = 30V, Ta = 25 oC -- -- 0.05 Reverse Leakage Current VR = 30V, Ta = 100 oC IR -- -- 18 mA Voltage Rate of Charge VR = 30V dv/dt -- 10000 -- V/us Notes: a. Pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. |
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