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TSM6970DCARV Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # TSM6970DCARV
Description  20V Dual N-Channel MOSFET w/ESD Protected
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM6970DCARV Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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Preliminary
TSM6970D
20V Dual N-Channel MOSFET w/ESD Protected
1/4
Version: Preliminary
TSSOP-8
Features
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
●
ESD Protect 2KV
Application
●
Load Switch
●
PA Switch
Ordering Information
Part No.
Package
Packing
TSM6970DCA RV
TSSOP-8
3Kpcs / 13” Reel
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current, VGS @4.5V
ID
8
A
Pulsed Drain Current, VGS @4.5V
IDM
30
A
Continuous Source Current (Diode Conduction)
a,b
IS
2.5
A
Ta = 25
oC
2
Maximum Power Dissipation
Ta = 70
oC
PD
1.28
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
oC
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Case Thermal Resistance
RӨJC
30
oC/W
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
62.5
oC/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
ID (A)
21 @ VGS = 4.5V
8
25 @ VGS = 2.5V
7
20
33 @ VGS = 1.8V
6
Block Diagram
Dual N-Channel MOSFET
Pin Definition:
1. Drain 1
8. Drain 2
2. Source 1
7. Source 2
3. Source 1
6. Source 2
4. Gate 1
5. Gate 2


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