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XP1073-BD Datasheet(PDF) 1 Page - Mimix Broadband |
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XP1073-BD Datasheet(HTML) 1 Page - Mimix Broadband |
1 / 10 page Page 1 of 10 P1073-BD 34.0-37.0 GHz GaAs MMIC Power Amplifier Chip Device Layout Mimix Broadband’s four stage 34.0-37.0 GHz GaAs MMIC power amplifier has a small signal gain of 22.0 dB with 6W saturated output power.This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.This device is well suited for Millimeter-wave Military, Radar, Satellite and Weather applications. Features General Description Electrical Characteristics (AmbientTemperatureT=25ºC) Parameter Frequency Range (f) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21)2 Gain Flatness ( S21) Reverse Isolation (S12) Saturated Output Power Pulsed (PSAT)2 Drain Bias Voltage (Vd1,2,3,4) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id1) (Vd=5.5V,Vg=-0.7V) Supply Current (Id2) (Vd=5.5V,Vg=-0.7V) Supply Current (Id3) (Vd=5.5V,Vg=-0.7V) Supply Current (Id4) (Vd=5.5V,Vg=-0.7V) Units GHz dB dB dB dB dB dBm VDC VDC mA mA mA mA Min. 34.0 - - - - - - - -1.2 - - - - Typ. - 18.0 10.0 22.0 +/-2.0 50.0 +37.0 +5.5 -0.7 320 640 1280 2560 Max. 37.0 - - - - - - +5.8 0.0 350 710 1420 2845 Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3,4) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)1 +6.0 VDC2 400,800,1600,3200 mA +0.3 VDC TBD -65 to +165 ºC -55 to +85 ºC 175 ºC (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. (2) Under pulsed bias conditions, under CW Psat conditions further reduction in max supply voltage (~0.5V) is recommended. Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency (PAE %) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. (2) Measured on wafer pulsed. February 2010 - Rev 16-Feb-10 XP1073-BD |
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