ELC-420-21 datasheet(1/1 Pages) EPIGAP

Part #	ELC-420-21

Description	LED - Chip

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Manufacturer	EPIGAP [EPIGAP optoelectronic GmbH]

Direct Link	http://www.epigap-berlin.com

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We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each application by the customer themselves.

LED - Chip

10.04.2008

rev. 01

Radiation

Violet

typ. dimensions (

±50) µm

typ. thickness

cathode

anode

Absolute Maximum Ratings

at Tamb = 25°C, unless otherwise specified

Symbol

Value

Unit

IF

500

mA

IFM

2

A

Tamb

-40 to +110

°C

Tstg

-40 to +110

°C

Tj

125

°C

Optical and Electrical Characteristics

Tamb = 25°C, unless otherwise specified

Parameter

Test

conditions

Symbol

Min

Typ

Max

Unit

Forward voltage

IF = 20 mA

VF

2.8

3.2

V

Forward voltage

1

IF = 350 mA

VF

3.1

3.5

V

Reverse voltage

IR = 10 µA

VR

5

V

Radiant power

1

IF = 20 mA

Φ

e

10

14

mW

Radiant power

1,2

IF = 350 mA

Φ

e

240

mW

Peak wavelength

IF = 350 mA

λ

P

410

420

430

nm

Spectral bandwidth at 50%

IF = 350 mA

∆λ

0.5

20

nm

Switching time

IF = 350 mA

tr, tf

30

ns

1)Measured on bare chip on TO-66 header

2)only recommended on optimal heat sink

Labeling

Type

Lot N°

Φ

e(typ) [mW]

VF(typ) [V]

λ

P(typ) [nm]

ELС-420-21

Packing: Chips on adhesive film with wire-bond side on top

Note: All measurements carried out with EPIGAP equipment

DC forward current

Junction temperature

Operating temperature range

Storage temperature range

Peak forward current

tp≤100 µs, D = 0.05

Type

Special

145 (

±15) µm

gold alloy, 2.5 µm

gold alloy, 1.5 µm

Parameter

Test сonditions

ELС-420-21

Electrodes

N (cathode) up

Technology

InGaN

Quantity

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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