ELC-572-13 datasheet(1/1 Pages) EPIGAP

Part #	ELC-572-13

Description	LED - Chip

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Manufacturer	EPIGAP [EPIGAP optoelectronic GmbH]

Direct Link	http://www.epigap-berlin.com

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LED - Chip

Preliminary

10.04.2007

rev. 03/06

Radiation

Yellow-green

typ. dimensions (µm)

typ. thickness

anode

cathode

dotted, 25% covered

Optical and Electrical Characteristics

Tamb = 25°C, unless otherwise specified

Parameter

Test

conditions

Symbol

Min

Typ

Max

Unit

Forward voltage

IF = 20 mA

VF

2.0

2.4

V

Reverse voltage

IR = 10 µA

VR

5V

Radiant power

1

IF = 20 mA

Φe

0.09

0.12

mW

Radiant power

2

IF = 20 mA

Φe

0.23

mW

Luminous intensity

1

IF = 20 mA

Iv

12

20

mcd

Luminous intensity

2

IF = 20 mA

Iv

38

mcd

Peak wavelength

IF = 20 mA

λp

568

572

577

nm

Dominant wavelength

IF = 20 mA

λD

572

nm

Spectral bandwidth at 50%

IF = 20 mA

∆λ0.5

15

nm

Switching time

IF = 20 mA

tr, tf

30/20

ns

1Measured on bare chip on TO-18 header with EPIGAP equipment

2Measured on epoxy covered chip on TO-18 header with EPIGAP equipment

Labeling

Type

Iv(typ) [mcd]

VF(typ) [V]

ELС-572-13

Packing: Chips on adhesive film with wire-bond side on top

260 (±20) µm

gold alloy, 1.5 µm

gold alloy, 0.5 µm

Quantity

Lot N°

Type

Standard

ELC-572-13

Electrodes

P (anode) up

Technology

AlInGaP/GaAs

265

110

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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