R

650W

ON

C

1pF

(SAMPLE)

BVDD

D

IN

BGND

AVDD

A

IN

AGND

DiodeTurn-OnVoltage:0.35V

EquivalentDigitalInputCircuit

EquivalentAnalogInputCircuit

ADS1209

www.ti.com

SBAS491 – FEBRUARY 2010

ELECTRICAL CHARACTERISTICS (continued)

Over operating ambient temperature range of –40°C to +105°C, AVDD = 5V, BVDD = 3V, CHx+ = 0.2V to 4.8V, CHx– =

ADS1209

PARAMETER

TEST CONDITIONS

MIN

MAX

UNIT

DIGITAL INPUTS

Logic family

LVCMOS

High-level input voltage

BVDD = 3.6V

2

BVDD + 0.3

V

Low-level input voltage

BVDD = 2.7V

–0.3

0.8

V

Input current

±50

nA

Input capacitance

5

pF

DIGITAL OUTPUTS

Logic family

LVCMOS

High-level output voltage

BVDD – 0.2

V

Low-level output voltage

0.2

V

Output capacitance

5

pF

Load capacitance

30

pF

Data format

Bit stream

POWER SUPPLY

AVDD

Analog supply voltage

4.5

5.0

5.5

V

Low-voltage levels

2.7

3.0

3.6

V

BVDD

Buffer I/O supply voltage

5V logic levels

4.5

5.0

5.5

V

CLKSEL = 1

12.2

17

mA

AIDD

Analog operating supply current

CLKSEL = 0

11.8

16

mA

BVDD = 3V, CLKOUT = 10MHz

0.9

2

mA

BIDD

Buffer I/O operating supply current

BVDD = 5V, CLKOUT = 10MHz

1.3

3

mA

CLKSEL = 1, 5V supply

67.5

100.0

mW

Power dissipation

CLKSEL = 0, 5V supply

65.5

95

mW

BLANKSPACE

EQUIVALENT INPUT CIRCUITS

Copyright © 2010, Texas Instruments Incorporated

Submit Documentation Feedback

5

Product Folder Link(s): ADS1209