BLS6G2933S-130_3

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Product data sheet

Rev. 03 — 3 March 2010

2 of 12

NXP Semiconductors

BLS6G2933S-130

LDMOS S-band radar power transistor

1.3 Applications

S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency

range

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

5.

Thermal characteristics

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1drain

2gate

3source

[1]

3

2

1

sym112

1

3

2

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLS6G2933S-130 -

ceramic earless flanged cavity package; 2 leads

SOT922-1

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Min

Max

Unit

drain-source voltage

-

60

V

gate-source voltage

−0.5

+13

V

drain current

-

33

A

storage temperature

−65

+150

°C

junction temperature

-

225

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

transient thermal impedance from junction

to mounting base

0.23

K/W

0.28

K/W

0.32

K/W

0.33

K/W