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BYC58X-600 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYC58X-600 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 11 page BYC58X-600_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 2 of 11 NXP Semiconductors BYC58X-600 8 A hyperfast rectifier diode 2. Pinning information 3. Ordering information Dynamic characteristics trr reverse recovery time IF =8A; VR =400 V; dIF/dt = 200 A/µs; Tj =25 °C; see Figure 6 - 12.5 - ns IF =8A; VR =400 V; dIF/dt = 200 A/µs; Tj = 125 °C; see Figure 6 and 7 -21 - ns Qr recovered charge IF =8A; VR =400 V; dIF/dt = 200 A/µs; Tj = 125 °C; see Figure 5 and 6 -40 - nC Static characteristics VF forward voltage IF =8A; Tj =25°C; see Figure 4 - 2.35 3.2 V IF =8A; Tj =150 °C; see Figure 4 -2 2.4 V Table 1. Quick reference …continued Symbol Parameter Conditions Min Typ Max Unit Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode SOD113 (TO-220F) 2 A anode mb n.c. mounting base; isolated 2 1 mb A 001aaa020 K Table 3. Ordering information Type number Package Name Description Version BYC58X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" SOD113 |
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