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PESDXS2UQ Datasheet(PDF) 7 Page - NXP Semiconductors |
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PESDXS2UQ Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 26 January 2010 7 of 13 NXP Semiconductors PESDxS2UQ series Double ESD protection diodes in SOT663 package (1) PESD3V3S2UQ; VRWM =3.3 V (2) PESD5V0S2UQ; VRWM =5V IR is less than 15 nA at 150 °C for: PESD12VS2UQ; VRWM =12V PESD15VS2UQ; VRWM =15V PESD24VS2UQ; VRWM =24V Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values 001aaa729 1 10 10−1 Tj (°C) −100 150 100 050 −50 IRM IRM(25°C) (1) (2) |
Similar Part No. - PESDXS2UQ_10 |
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Similar Description - PESDXS2UQ_10 |
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