HMP351S6AFR8C-S6 datasheet(9/17 Pages) HYNIX

Part #	HMP351S6AFR8C-S6

Description	200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 2Gb version A

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Manufacturer	HYNIX [Hynix Semiconductor]

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9 / 17 page

Rev. 1.0 / Dec. 2009

9

1200pin Unbuffered DDR2 SDRAM SO-DIMMs

OUTPUT BUFFER LEVELS

OUTPUT AC TEST CONDITIONS

Notes:

1. The VDDQ of the device under test is referenced.

OUTPUT DC CURRENT DRIVE

Notes:

1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and

VDDQ - 280 mV.

2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.

3. The dc value of VREF applied to the receiving device is set to VTT

4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device

drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an

SSTL_18 receiver.

The actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define

a convenient driver current for measurement.

Symbol

Parameter

SSTL_18

Units

Notes

VOTR

Output Timing Measurement Reference Level

0.5 * VDDQ

V1

Symbol

Parameter

SSTl_18

Units

Notes

IOH(dc)

Output Minimum Source DC Current

- 13.4

mA

1, 3, 4

IOL(dc)

Output Minimum Sink DC Current

13.4

mA

2, 3, 4

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