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HYMD232M646DL8-K Datasheet(PDF) 7 Page - Hynix Semiconductor

Part # HYMD232M646DL8-K
Description  200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
Download  23 Pages
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HYMD232M646DL8-K Datasheet(HTML) 7 Page - Hynix Semiconductor

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Rev. 1.1 / May. 2005
7
11
200pin Unbuffered DDR SDRAM SO-DIMMs
ABSOLUTE MAXIMUM RATINGS1
Note:
1. Operation at above absolute maximum rating can adversely affect device reliability
Parameter
Symbol
Rating
Unit
Operating Temperature (Ambient)
TA
0 ~ 70
oC
Storage Temperature
TSTG
-55 ~ 150
oC
Voltage on VDD relative to VSS
VDD
-1.0 ~ 3.6
V
Voltage on VDDQ relative to VSS
VDDQ
-1.0 ~ 3.6
V
Voltage on inputs relative to Vss
VINPUT
-1.0 ~ 3.6
V
Voltage on I/O pins relative to Vss
VIO
-0.5 ~3.6
V
Output Short Circuit Current
IOS
50
mA
Soldering Temperature
⋅ Time
TSOLDER
260
⋅ 10
oC ⋅ Sec
DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Note:
1. VDDQ must not exceed the level of VDD.
2. For DDR400, VDD=2.6V ± 0.1V, VDDQ=2.6V ± 0.1V
3. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
4. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same. Peak to
peak noise on VREF may not exceed ± 2% of the DC value.
5. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
6. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera-
ture and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum differ-
ence between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
7. VIN=0 to VDD, All other pins are not tested under VIN =0V.
8. DQs are disabled, VOUT=0 to VDDQ.
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage (DDR 200, 266, 333)
VDD
2.3
2.5
2.7
V
Power Supply Voltage (DDR 400)
VDD
2.5
2.6
2.7
V
2
Power Supply Voltage (DDR 200, 266, 333)
VDDQ
2.3
2.5
2.7
V
1
Power Supply Voltage (DDR 400)
VDDQ
2.5
2.6
2.7
V
1,2
Input High Voltage
VIH
VREF + 0.15
-
VDDQ + 0.3
V
Input Low Voltage
VIL
-0.3
-
VREF - 0.15
V
3
Termination Voltage
VTT
VREF - 0.04
VREF
VREF + 0.04
V
Reference Voltage
VREF
0.49*VDDQ
0.5*VDDQ
0.51*VDDQ
V
4
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
-
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.36
-
VDDQ+0.6
V
5
V-I Matching: Pullup to Pulldown Current Ratio
VI(RATIO)
0.71
-
1.4
-
6
Input Leakage Current
ILI
-2
-
2
uA
7
Output Leakage Current
ILO
-5
-
5
uA
8
Normal Strength
Output Driver
(VOUT=VTT ± 0.84)
Output High Current
(min VDDQ, min VREF, min VTT)
IOH
-16.8
-
-
mA
Output Low Current
(min VDDQ, max VREF, max VTT)
IOL
16.8
-
-
mA
Half Strength Out-
put Driver
(VOUT=VTT ± 0.68)
Output High Current
(min VDDQ, min VREF, min VTT)
IOH
-13.6
-
-
mA
Output Low Current
(min VDDQ, max VREF, max VTT)
IOL
13.6
-
-
mA


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