NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Thermal Resistance Junction to Ambient.

=90 C

1N5817 thru 1N5819

FEATURES

Metal-Semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop

High current capability

The plastic material carries UL recognition 94V-0

For use in low voltage,high frequency inverters,free

wheeling,and polarity protection applications

MECHANICAL DATA

Case : JEDEC DO-41 molded plastic

Polarity : Color band denotes cathode

Weight : 0.012 ounces, 0.34 grams

Mounting position : Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

1N5818

30

21

30

1N5817

20

14

20

1N5819

40

28

40

Maximum Average Forward

Rectified Current

Peak Forward Surge Current

8.3ms single half sine-wave

super imposed on rated load (JEDEC Method)

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum forward Voltage at 1.0A DC

1.0

25

0.450

Operating Temperature Range

-55 to +125

C

Storage Temperature Range

-55 to +150

C

Typical Thermal Resistance (Note 2)

50

C/W

Typical Junction Capacitance (Note 1)

110

pF

Maximum DC Reverse Current

at Rated DC Bl

ocking Voltage

1.0

10

mA

mA

V

A

A

V

UNIT

V

V

All Dimensions in millimeter

Max.

Min.

DO-41

Dim.

A

D

C

B

25.4

5.20

-

4.20

0.70

2.00

2.70

0.90

DO-41

A

C

D

A

B

CHARACTERISTICS

SYMBOL

Maximum forward Voltage at 3.0A DC

0.550

0.600

0.900

0.875

0.750

V

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 40 Volts

FORWARD CURRENT - 1.0 Ampere

Compact Technology

CTC0072 Ver. 2.0

1 of 2

1N5817 thru 1N5819