HYMD116M725B8-K datasheet(8/19 Pages) HYNIX

Part #	HYMD116M725B8-K

Description	Unbuffered DDR SDRAM SO-DIMM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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8 / 19 page

Rev. 0.2/Aug. 02

8

HYMD116M725B(L)8-J/M/K/H/L

DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V)

Parameter

Symbol

Test Condition

Speed

Unit Note

-J

-M

-K

-H

-L

Operating Current

IDD0

One bank; Active - Precharge; tRC=tRC(min);

tCK=tCK(min); DQ,DM and DQS inputs changing

twice per clock cycle; address and control inputs

changing once per clock cycle

720

640

mA

Operating Current

IDD1

One bank; Active - Read - Precharge;

Burst Length= 2; tRC=tRC(min); tCK=tCK(min);

address and control inputs changing once per

clock cycle

880

800

640

mA

Precharge Power

Down Standby

Current

IDD2P

All banks idle; Power down mode ; CKE=Low,

tCK=tCK(min)

160

120

mA

Idle Standby Current

IDD2F

/CS=High, All banks idle; tCK=tCK(min);

CKE=High; address and control inputs changing

once per clock cycle.

VIN=VREF for DQ, DQS and DM

320

280

mA

Active Power Down

Standby Current

IDD3P

One bank active; Power down mode; CKE=Low,

tCK=tCK(min)

160

mA

Active Standby

Current

IDD3N

/CS=HIGH; CKE=HIGH; One bank; Active-

Precharge; tRC=tRAS(max); tCK=tCK(min); DQ,

DM and DQS inputs changing twice per clock

cycle; Address and other control inputs changing

once per clock cycle

320

mA

Operating Current

IDD4R

Burst=2; Reads; Continuous burst; One bank

active; Address and control inputs changing once

per clock cycle; tCK=tCK(min); IOUT = 0mA

1840 1520 1520 1520 1200

mA

Operating Current

IDD4W

Burst=2; Writes; Continuous burst; One bank

active; Address and control inputs changing once

per clock cycle; tCK=tCK(min); DQ, DM and DQS

inputs changing twice per clock cycle

1840 1520 1520 1520 1200

mA

Auto Refresh

Current

IDD5

tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,

10*tCK for DDR266A & DDR266B at 133Mhz;

distributed refresh

1280 1200 1200 1200 1120

mA

Self Refresh Current

IDD6

CKE=<0.2V; External clock on;

tCK=tCK(min)

Normal

16

mA

Low Power

8mA

Operating Current -

Four Bank Operation

IDD7

Four bank interleaving with BL=4, Refer to the

following page for detailed test condition

2400 2080 2080 2080 1760

mA

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