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HYMD216M726AL6-K Datasheet(PDF) 8 Page - Hynix Semiconductor |
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HYMD216M726AL6-K Datasheet(HTML) 8 Page - Hynix Semiconductor |
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8 / 19 page  HYMD216M726A(L)6-J/M/K/H/L Rev. 0.3/Oct. 02 8 DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Symbol Test Condition Speed Unit Note -J -M -K -H -L Operating Current IDD0 One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle 525 525 475 475 450 mA Operating Current IDD1 One bank; Active - Read - Precharge; Burst Length=2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock cycle 750 750 650 650 600 mA Precharge Power Down Standby Current IDD2P All banks idle; Power down mode; CKE=Low, tCK=tCK(min) 100 mA Idle Standby Current IDD2F /CS=High, All banks idle; tCK=tCK(min); CKE= High; address and control inputs changing once per clock cycle. VIN=VREF for DQ, DQS and DM 250 250 200 200 175 mA Active Power Down Standby Current IDD3P One bank active; Power down mode; CKE=Low, tCK=tCK(min) 125 mA Idle Quiet Standby Current IDD2Q /CS>=Vih(min); All banks idle; CKE>=Vih(min); Addresses and other control inputs stable, Vin=Vref for DQ, DQS and DM TBD mA Active Standby Current IDD3N /CS=HIGH; CKE=HIGH; One bank; Active- Precharge; tRC=tRAS(max); tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle 300 300 250 250 250 mA Operating Current IDD4R Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); IOUT=0mA 1450 1450 1250 1250 950 mA Operating Current IDD4W Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle 1450 1450 1250 1250 950 Auto Refresh Current IDD5 tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh 1150 1150 1050 1050 975 Self Refresh Current IDD6 CKE=<0.2V; External clock on; tCK =tCK(min) Normal 15 mA Low Power 7.5 mA Operating Current - Four Bank Operation IDD7 Four bank interleaving with BL=4 Refer to the following page for detailed test condition 1675 1675 1625 1625 1450 mA Random Read Current IDD7A 4banks active read with activate every 20ns, AP(Auto Precharge) read every 20ns, BL=4, tRCD=3, IOUT=0 mA, 100% DQ, DM and DQS inputs changing twice per clock cycle; 100% addresses changing once per clock cycle TBD mA |
Similar Part No. - HYMD216M726AL6-K |
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Similar Description - HYMD216M726AL6-K |
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