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HYMD216646A6-M Datasheet(PDF) 8 Page - Hynix Semiconductor |
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HYMD216646A6-M Datasheet(HTML) 8 Page - Hynix Semiconductor |
8 / 16 page HYMD216646A(L)6-M/K/H/L Rev. 0.2/May. 02 8 DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Symbol Test Condition Speed Unit Note -M -K -H -L Operating Current IDD0 One bank; Active Precharge; tRC=tRC(min); tCK= tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle 420 380 380 360 mA Operating Current IDD1 One bank; Active - Read - Precharge; Burst Length=2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock cycle 600 520 520 480 mA Precharge Power Down Standby Current IDD2P All banks idle; Power down mode; CKE=Low, tCK=tCK(min) 80 mA Idle Standby Current IDD2F /CS=High, All banks idle; tCK=tCK(min); CKE= High; address and control inputs changing once per clock cycle. VIN=VREF for DQ, DQS and DM 200 160 160 140 mA Active Power Down Standby Current IDD3P One bank active; Power down mode; CKE=Low, tCK=tCK(min) 100 mA Active Standby Current IDD3N /CS=HIGH; CKE=HIGH; One bank; Active- Precharge; tRC=tRAS(max); tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle 240 200 200 200 mA Operating Current IDD4R Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); IOUT=0mA 1160 1000 1000 760 mA Operating Current IDD4W Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle 1160 1000 1000 760 Auto Refresh Current IDD5 tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh 920 840 840 780 Self Refresh Current IDD6 CKE=<0.2V; External clock on; tCK =tCK(min) Normal 12 mA Low Power 6mA Operating Current - Four Bank Operation IDD7 Four bank interleaving with BL=4 Refer to the following page for detailed test condition 1340 1300 1300 1160 mA |
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