For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

11

11 - 349

HMC755LP4E

v00.0709

GaAs MMIC 1 WATT

POWER AMPLIFIER, 2.3 - 2.8 GHz

Pin Number

Function

Description

Interface Schematic

1, 3, 5, 6, 12 - 14,

18, 19, 21, 22, 24

N/C

These pins are not connected internally. However, all data

shown herein was measured with these pins connected to

RF/DC ground.

2GND

Ground: Backside of package has exposed metal paddle

that must be connected to ground thru a short path.

Vias under the device are required.

4RFIN

This pin is DC coupled

and matched to 50 Ohms.

7

VCS

DC power supply pin for bias circuitry.

8 - 10

VEN1 - 3

Power control pins. For max power these

pins should be connected to 5V. This voltage

can be reduced, or R1-R4 resistor values increased

to reduce the quiescent current.

For full power down, apply V <0.5V

11

VDET

DC voltage output proportional to RFOUT signal.

15, 16, 17

RFOUT

RF output and DC bias for the output stage. External

RF matching, bypass capacitors, and pull up choke are

required as shown in the application circuit.

20

Vcc2

Power supply voltage for the second amplifier stage.

External bypass capacitors and pull up choke are required

as shown in the application schematic.

23

Vcc1

Power supply voltage for the first amplifier stage. External

bypass capacitors are required as shown in the application

schematic.

Pin Descriptions