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H5DU5182EFR-K3J Datasheet(PDF) 3 Page - Hynix Semiconductor

Part # H5DU5182EFR-K3J
Description  512Mb DDR SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

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Rev. 1.0 / Nov. 2009
3
1H5DU5182EFR-xxI
H5DU5162EFR-xxI
DESCRIPTION
The H5DU5182EFR and H5DU5162EFR are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ide-
ally suited for the main memory applications which requires large memory density and high bandwidth.
This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter-
nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
with SSTL_2.
FEATURES
•VDD, VDDQ = 2.5V +/- 0.2V
All inputs and outputs are compatible with SSTL_2
interface
Fully differential clock inputs (CK, /CK) operation
Double data rate interface
Source synchronous - data transaction aligned to
bidirectional data strobe (DQS)
x16 device has two bytewide data strobes (UDQS,
LDQS) per each x8 I/O
Data outputs on DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered
DQ)
On chip DLL align DQ and DQS transition with CK
transition
DM mask write data-in at the both rising and falling
edges of the data strobe
All addresses and control inputs except data, data
strobes and data masks latched on the rising edges
of the clock
Programmable CAS latency 2/2.5 (DDR200, 266,
333), 3 (DDR400) and 4 (DDR500) supported
Programmable burst length 2/4/8 with both sequen-
tial and interleave mode
Internal four bank operations with single pulsed
/RAS
Auto refresh and self refresh supported
•tRAS lock out function supported
8192
refresh cycles/64ms
•60 Ball FBGA Package Type
This product is in compliance with the directive per-
taining of RoHS.
OPERATING FREQUENCY
* Higher speed part is compatible with the lower speed part.
Grade
Clock Rate
Remark
(CL-tRCD-tRP)
- FA
250MHz@CL4
DDR500 (4-4-4)
- E3
200MHz@CL3, 166MHz@CL2.5,
133MHz@CL2
DDR400 (3-3-3),
DDR333 (2.5-3-3),
DDR266A (2-3-3),
DDR266B (2.5-3-3)
- J3
166MHz@CL2.5, 133MHz@CL2
DDR333 (2.5-3-3),
DDR266A (2-3-3),
DDR266B (2.5-3-3)
- K2
133MHz@CL2, 133MHz@CL2.5
DDR266A (2-3-3),
DDR266B (2.5-3-3)
- K3
133MHz@CL2.5, 100MHz@CL2
DDR266B (2.5-3-3)
- L2
100MHz@CL2
DDR200 (2-2-2)
ORDERING INFORMATION
*X means speed grade
*ROHS (Restriction Of Hazardous Substance)
Part No.
Configuration
Package
H5DU5182EFR-XXI
64Mx8
60 Ball
FBGA
H5DU5162EFR-XXI
32Mx16


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