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H55S1G32MFP-60 Datasheet(PDF) 9 Page - Hynix Semiconductor |
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H55S1G32MFP-60 Datasheet(HTML) 9 Page - Hynix Semiconductor |
9 / 53 page Rev 1.2 / Jun. 2008 9 11 1Gbit (32Mx32bit) Mobile SDR Memory H55S1G(2/3)2MFP Series CAPACITANCE (TA= 25 oC, f=1MHz) DC CHARACTERRISTICS I (TA= -30 to 85oC) Note : 1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V. 2. DOUT is disabled. VOUT= 0 to 1.95V. 3. IOUT = - 0.1mA 4. IOUT = + 0.1mA Parameter Pin Symbol 6/H Unit Min Max Input capacitance CLK CI1 1.5 3.5 pF A0~A13, BA0, BA1, CKE, CS, RAS, CAS, WE, DQM0~3 CI2 1.5 3.0 pF Data input/output capacitance DQ0 ~ DQ31 CI/O 2.0 4.5 pF Parameter Symbol Min Max Unit Note Input Leakage Current ILI -1 1 uA 1 Output Leakage Current ILO -1.5 1.5 uA 2 Output High Voltage VOH 0.9*VDDQ - V 3 Output Low Voltage VOL - 0.1*VDDQ V 4 |
Similar Part No. - H55S1G32MFP-60 |
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Similar Description - H55S1G32MFP-60 |
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