H57V2582GTR-75I datasheet(8/22 Pages) HYNIX

Part #	H57V2582GTR-75I

Description	256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

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Manufacturer	HYNIX [Hynix Semiconductor]

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Synchronous DRAM Memory 256Mbit

H57V2582GTR-xxI Series

Rev 1.0 / Aug. 2009

8

ABSOLUTE MAXIMUM RATING

Note : Operation at above absolute maximum rating can adversely affect device reliability

DC OPERATING CONDITION

Note:

1. All voltages are referenced to VSS = 0V.

2. VIH(Max) is acceptable VDDQ + 2V for a pulse width with <= 3ns of duration.

3. VIL(min) is acceptable -2.0V for a pulse width with <= 3ns of duration.

AC OPERATING TEST CONDITION (TA= -40 to 85oC, VDD=3.3±0.3V / VSS=0V)

Note:

1. See Next Page

Parameter

Symbol

Rating

Unit

Ambient Temperature

TA

-40 ~ 85

oC

Storage Temperature

TSTG

-55 ~ 125

oC

Voltage on Any Pin relative to VSS

VIN, VOUT

-1.0 ~ 4.6

V

Voltage on VDD supply relative to VSS

VDD, VDDQ

-1.0 ~ 4.6

V

Short Circuit Output Current

IOS

50

mA

Power Dissipation

PD

1W

Parameter

Symbol

Min

Max

Unit

Note

Power Supply Voltage

VDD, VDDQ

3.0

3.6

V

1

Input High Voltage

VIH

2.0

VDDQ + 0.3

V

1, 2

Input Low Voltage

VIL

-0.3

0.8

V

1, 3

Parameter

Symbol

Value

Unit

Note

AC Input High / Low Level Voltage

VIH / VIL

2.4 / 0.4

V

Input Timing Measurement Reference Level Voltage

Vtrip

1.4

V

Input Rise / Fall Time

tR / tF

1

ns

Output Timing Measurement Reference Level Voltage

Voutref

1.4

V

Output Load Capacitance for Access Time Measurement

CL

50

pF

1

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