HY5FS123235AFCP-07 datasheet(5/74 Pages) HYNIX

Part #	HY5FS123235AFCP-07

Description	512M (16Mx32) GDDR4 SDRAM

Download	74 Pages

Scroll/Zoom	100%

Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

Logo

5 / 74 page

Rev. 1.2 /June. 2008

5

HY5FS123235AFCP

FEATURES

• Double-data rate architecture;

two data transfers per clock cycle

• Single ended READ strobe (RDQS) per byte

• Single ended WRITE strobe (WDQS) per byte

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge;

data and data mask referenced to both edges

of RDQS/WDQS

• Eight internal banks for concurrent operation

• Data mask (DM) for masking WRITE data

• Burst Length: 8 only

• Multiplexed addressing

• Auto Precharge option for each burst access

• Auto Refresh and Self Refresh Modes

• On die termination (ODT)

• Calibrated output drive

• Programmable offset for both driver and termination

• POD_18 compatible inputs/outputs

• VDD and VDDQ: 1.8V +/- 5%, 2.0V +/- 5%

• CAS Latency : 7~22

FUNCTIONAL DESCRIPTION

The Hynix HY5FS123235AFCP is a high speed CMOS,

dynamic random access memory internally configured as

a eight bank DRAM.

These devices contain the following number of bits:

512M has 536,870,912 bits and eight banks

The Hynix HY5FS123235AFCP uses a double data rate

architecture to achieve high speed operation.

Thedoubledataratearchitectureisessentially an 8N

prefetch architecture with an interface designed to transfer

two data words per clock cycle at the I/O pins.

A single read or write access for the

Hynix HY5FS123235AFCP effectively consists of an 8N

data transfer every four clock-cycles at the inernal

DRAM core and eight corresponding n-bit wide, one-half-

clock-cycle data transfers at the I/O pins.

Uni-directional data strobes are transmitted

externally, along with data, for use in data capture

at the receiver. RDQS is a strobe transmitted by the

GDDR4 SDRAM during READs. WDQS is the data strobe

sent by the memory controller during WRITEs.

RDQS is edge aligned with data for READs and WDQS is

center aligned with data for WRITEs.

The GDDR4 SDRAM operates from a differential clock

(CK and CK# the crossing of the CK going high and

CK# going low will be referred to as the positive edge

of CK). Commands (address and control signals)

are registered at the positive edge of CK.

Address is received on two consecutive rising edges of

CK. Input data is registered at both edges of WDQS,

and output data is referenced to both edges of RDQS,

as well as to both edges of CK.

Read and write accesses to the GDDR4 SDRAM are

burst oriented; accesses start at a selected location

and continue for a total of eight locations. Accesses begi

n with the registration of an ACTIVE command, which is

then followed by a READ or WRITE command.

The address bits registered coincident with the ACTIVE

command are used to select the bank and the row to be

accessed. The address bits registered coincident with the

READ or WRITE command are used to select the bank

and the starting column locaion for the burst access.

ORDERING INFORMATION

Note: Above Hynix P/N’s and their homogeneous Subcomponents are RoHS(& Lead free) Compliant.

Part No.

Power Supply

Clock Frequency

Max Data Rate

Interface

HY5FS123235AFCP-06

VDD/VDDQ = 2.0V

1.6GHz

3.2Gbps/pin

POD_18

HY5FS123235AFCP- 07

1.4GHz

2.8Gbps/pin

HY5FS123235AFCP- 08

VDD/VDDQ = 1.8V

1.2GHz

2.4Gbps/pin

HY5FS123235AFCP- 09

1.1GHz

2.2Gbps/pin

Similar Part No. - HY5FS123235AFCP-07

Manufacturer	Part #	Datasheet	Description
LEM	HY5-P	109Kb / 2P	Current Transducers HY 5 to 25-P
	HY5-P	685Kb / 2P	Current Transducers
	HY5-P	685Kb / 2P	Current Transducers
	HY50-P	130Kb / 2P	Current Transducer HY 50-P
	HY50-P	679Kb / 2P	Current Transducers

More results

Similar Description - HY5FS123235AFCP-07

Manufacturer	Part #	Datasheet	Description
Hynix Semiconductor	HY5DS113222FM	431Kb / 30P	512M(16Mx32) GDDR SDRAM
	HY5DW113222FMP	300Kb / 30P	512M(16Mx32) GDDR SDRAM
	HY5DU113222FM-2	299Kb / 30P	512M(16Mx32) GDDR SDRAM
White Electronic Design...	WED3DL3216V	804Kb / 27P	16Mx32 SDRAM
Hynix Semiconductor	H5RS5223CFR-N3C	1Mb / 66P	512Mbit (16Mx32) GDDR3 SDRAM
Elpida Memory	EDS5104ABTA	564Kb / 52P	512M bits SDRAM
List of Unclassifed Man...	IS43R16320D	1Mb / 33P	16Mx32, 32Mx16, 64Mx8 512Mb DDR SDRAM
Elpida Memory	EDD5104ADTA	469Kb / 49P	512M bits DDR SDRAM
	EDD5108AFTA-5	558Kb / 48P	512M bits DDR SDRAM
	EDE5108AJBG	620Kb / 77P	512M bits DDR2 SDRAM

More results

HY5FS123235AFCP-07 Datasheet(PDF) 5 Page - Hynix Semiconductor

HY5FS123235AFCP-07 Datasheet(HTML) 5 Page - Hynix Semiconductor

Similar Part No. - HY5FS123235AFCP-07

Similar Description - HY5FS123235AFCP-07

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74

Datasheet Download

Link URL