UTCBT169

SCR

1

DESCRIPTION

The UTC BT169 is glass passivated, sensitive gate

thyristors in a plastic envelope, intended for use in

general

purpose

switching

and

phase

control

applications.

These devices are intended to be

interfaced directly to microcontrollers, logic integrated

circuits and other low power gate trigger circuits.

TO-92

1

1:CATHODE

2:GATE

3:ANODE

QUICK REFERENCE DATA

PARAMETER

SYMBOL

MAX(B)

MAX(D)

MAX(E)

MAX(G)

UNIT

Repetitive peak off-state voltages

200

400

500

600

V

Average on-state current

0.5

0.5

0.5

0.5

A

RMS on-state current

0.8

0.8

0.8

0.8

A

Non-repetitive peak on-state current

8

8

8

8

A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

CONDITIONS

MIN

MAX

UNIT

Repetitive peak off-state voltages :

B:200

D:400

E:500

G:600

V

Average on-state current

Half sine wave;

Tlead<=83

°C

0.5

A

RMS on-state current

All conduction angles

0.8

A

Non-repetitive peak on-state current

t=10ms

t=8.3ms

half sine wave;

Tj=25

°C prior to surge

8

9

A

I

I

t=10ms

0.32

A

Repetitive rate of rise of on-state current

after triggering

DI

dI

50

A/

µs

Peak gate current

1

A

Peak gate voltage

5

V

Peak reverse gate voltage

5

V