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PSD43F-12 Datasheet(PDF) 1 Page - Powersem GmbH |
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PSD43F-12 Datasheet(HTML) 1 Page - Powersem GmbH |
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1 / 1 page Three Phase PSD 43F I dAV = 40 A Rectifier Bridge V RRM = 800 - 1200 V with fast Recovery Epitaxial Diode (FRED) trr = 40 ns Preliminary Data Sheet Features • Package with DCB ceramic base plate • Isolation voltage 3000 V ∼ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board soldering • UL registered, E 148688 Applications • Supplies for DC power equipment • Input and output rectifier for high frequency • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Low noise switching • Small and light weight Package style and outline Dimensions in mm (1mm = 0.0394“) Data according to IEC 60747 refer to a single diode unless otherwise stated *- for resistive load at bridge output POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 1 2005 POWERSEM reserves the right to change limits, test conditions and dimensions ~ A K ~H ~N - + Symbol Test Conditions Maximum Ratings I* dAV T C = 85 °C, (per module) 40 A I dAVM 90 A I FSM T VJ = 45 °C t = 10 ms (50 Hz), sine 90 A V R = 0 t = 8.3 ms (60 Hz), sine 100 A T VJ = TVJM t = 10 ms (50 Hz), sine 75 A V R = 0 t = 8.3 ms (60 Hz), sine 85 A ∫∫∫∫∫ i2 dt T VJ = 45 °C t = 10 ms (50 Hz), sine 40 A²s V R = 0 t = 8.3 ms (60 Hz), sine 40 A²s T VJ = TVJM t = 10 ms (50 Hz), sine 30 A²s V R = 0 t = 8.3 ms (60 Hz), sine 30 A²s T VJ -40... + 150 °C T VJM 150 °C T stg -40... + 125 °C V ISOL 50/60 Hz, RMS t = 1 min 2500 V ∼ I ISOL ≤ 1 mA t = 1 s 3000 V ∼ M d Mounting torque (M4) 1.5 - 1.8 Nm 14 - 16 lb.in. Weight typ. 16 g Symbol Test Conditions Characteristic Value I R V R = VRRM, TVJ = TVJM ≤ 0.5 mA V R = VRRM, TVJ = 25°C ≤ 0 .1 mA V F I F = 15 A, T VJ = 25 °C ≤ 2.73 V V TO For power-loss calculations only 1.32 V r T 30 m Ω R thJC per diode; DC 1.6 K/W per module 0.27 K/W R thJK per diode; DC 1.9 K/W per module 0.32 K/W I RM I F=25A; -diF/dt=100A/µs; VR=100V typ. 5 A L =0.05 mH; T VJ= 100°C t rr I F=1A; -diF/dt=100A/µs; VR=30V; typ. 40 ns T VJ= 25°C d s Creeping distance on surface 11.2 mm d A Creeping distance in air 9.7 mm a Max. allowable acceleration 50 m/s² V RSM V RRM Type V DSM V DRM (V) (V) 800 800 PSD 43F/08 1200 1200 PSD 43F/12 |
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