Fast Recovery

PSEI 2x61

I

FAVM

= 2x 60 A

Epitaxial Diode (FRED)

V

RRM

= 400/600 V

t

rr

= 35 ns

Features

•

2 independent FRED in 1 package

•

Isolation voltage 3000 V

∼

•

Planar glass passivated chips

•

Low forward voltage drop

•

Leads suitable for PC board

soldering

•

Very short recovery time

•

Soft recovery behaviour

•

UL registered, E 148688

Applications

•

Antiparallel diode for high frequency

switching devices

•

Anti saturation diode

•

Snubber diode

•

Free wheeling diode in converters

and motor control circuits

•

Rectifiers in switch mode power

supplies (SMPS)

•

Inductive heating and melting

•

Uninterruptible power supplies (UPS)

•

Ultrasonic cleaners and welders

Advantages

•

Easy to mount with two screws

•

Space and weight savings

•

Improved temperature and power

cycling capability

•

Low noise switching

•

Small and light weight

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

Data according to IEC 60747 refer to a single diode

unless otherwise stated

Preliminary Data Sheet

V

RSM

V

RRM

Type

(V)

(V)

440

400 PSEI 2x61/04

640

600 PSEI 2x61/06

I

FRMS

T

100

A

I

T

60

A

I

FRM

t

A

I

FSM

T

t = 10 ms (50 Hz), sine

550

A

V

t = 8.3 ms (60 Hz), sine

600

A

T

t = 10 ms (50 Hz), sine

480

A

V

t = 8.3 ms (60 Hz), sine

520

A

T

t = 10 ms (50 Hz), sine

1510

A²s

V

t = 8.3 ms (60 Hz), sine

1490

A²s

T

t = 10 ms (50 Hz), sine

1150

A²s

V

t = 8.3 ms (60 Hz), sine

1120

A²s

T

VJ

-40... + 150

°C

T

VJM

150

°C

T

stg

-40... + 150

°C

V

ISOL

50/60 Hz, RMS t = 1 min

2500

V

∼

I

t = 1 s

3000

V

∼

M

d

Mounting torque

(M4)

1.5 - 1.8

Nm

14 - 16

lb.in.

Weight

typ.

16

g

Symbol

Test Conditions

Maximum Ratings

Symbol

Test Conditions

Characteristic Value

I

R

T

25°C, V

max.

200

µA

T

25°C, V

.V

RRM

max.

100

µA

T

V

.V

RRM

max.

14

mA

V

F

I

T

max.

1.50

V

T

25 °C

max.

1.80

V

V

TO

For power-loss calculations only

1.13

V

r

T

4.7

m

Ω

R

thJC

per diode; max.

0.7

K/W

R

thCH

per diode; typ.

0.05

K/W

I

RM

I

typ.

19

A

L

≤0.05 mH; T

t

rr

I

typ.

35

ns

T

d

s

Creeping distance on surface

11.2

mm

d

A

Creeping distance in air

11.2

m m

a

Max. allowable acceleration

50

m/s²