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PSEI2x31-12 Datasheet(PDF) 1 Page - Powersem GmbH |
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PSEI2x31-12 Datasheet(HTML) 1 Page - Powersem GmbH |
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1 / 2 page  Fast Recovery PSEI 2x30 I FAVM = 2x 28 A Epitaxial Diode (FRED) PSEI 2x31 V RRM = 1200 V t rr = 40 ns Features • 2 independent FRED in 1 package • Isolation voltage 3600 V ∼ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board soldering • Very short recovery time • Soft recovery behaviour • UL registered, E 148688 Applications • Antiparallel diode for high frequency switching devices • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Low noise switching • Small and light weight POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 1 2005 POWERSEM reserves the right to change limits, test conditions and dimensions Data according to IEC 60747 refer to a single diode unless otherwise stated *IFAVM rating includes blocking losses at TVJM; VR=0.8 VRRM; duty cycle d=0.5 Preliminary Data Sheet V RSM V RRM Type (V) (V) 1200 1200 PSEI 2x30/12 PSEI 2x31/12 Symbol Test Conditions Maximum Ratings I FRMS T VJ = TVJM 70 A I FAVM* T C = 50 °C, rectangular, d=0.5 28 A I FRM t P<10µs; rep.rating, pulse width limited by TVJM 375 A I FSM T VJ = 45 °C t = 10 ms (50 Hz), sine 200 A V R = 0 t = 8.3 ms (60 Hz), sine 210 A T VJ = 125 °C t = 10 ms (50 Hz), sine 185 A V R = 0 t = 8.3 ms (60 Hz), sine 195 A ∫∫∫∫∫ i2 dt T VJ = 45 °C t = 10 ms (50 Hz), sine 200 A²s V R = 0 t = 8.3 ms (60 Hz), sine 180 A²s T VJ = 125 °C t = 10 ms (50 Hz), sine 170 A²s V R = 0 t = 8.3 ms (60 Hz), sine 160 A²s T VJ -40... + 150 °C T VJM 150 °C T stg -40... + 150 °C V ISOL 50/60 Hz, RMS t = 1 min 2500 V ∼ I ISOL ≤ 1 mA t = 1 s 3600 V ∼ M d Mounting torque (M4) 1.5 - 1.8 Nm 14 - 16 lb.in. Weight typ. 16 g Symbol Test Conditions Characteristic Value I R T VJ = 25°C, V R=VRRM max. 750 µA T VJ = 25°C, V R=0.8 .V RRM max. 250 µA T VJ = 125°C, V R=0.8 .V RRM max. 7 mA V F I F = 30 A, T VJ = 150 °C max. 2.20 V T VJ = 25 °C max. 2.55 V V TO For power-loss calculations only 1.65 V r T 18.2 m Ω R thJC per diode; max. 1.25 K/W R thCH per diode; typ. 0.05 K/W I RM I F=30A; -diF/dt=240A/µs; VR=540V typ. 16 A L ≤0.05 mH; T VJ= 100°C t rr I F=1A; -diF/dt=100A/µs; VR=30V; typ. 40 ns T VJ= 25°C d s Creeping distance on surface 11.2 mm d A Creeping distance in air 11.2 m m a Max. allowable acceleration 50 m/s² 2x30 2x30 2x30 2x30 2x30 2x31 2x31 2x31 2x31 2x31 |
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Similar Description - PSEI2x31-12 |
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