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PCHMB100E6 Datasheet(PDF) 2 Page - Nihon Inter Electronics Corporation |
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PCHMB100E6 Datasheet(HTML) 2 Page - Nihon Inter Electronics Corporation |
2 / 4 page 00 日本インター株式会社 PCHMB100E6 01 2 3 4 5 0 20 40 60 80 100 120 140 160 180 200 Collector to Emitter Voltage VCE (V) Fig.1- Output Characteristics (Typical) TC=25°C 11V 10V VGE=20V 9V 8V 12V 15V 01 2 3 4 5 0 20 40 60 80 100 120 140 160 180 200 Collector to Emitter Voltage VCE (V) Fig.2- Output Characteristics (Typical) TC=125°C 11V 10V VGE=20V 9V 8V 12V 15V 04 8 12 16 20 0 2 4 6 8 10 12 14 16 Gate to Emitter Voltage VGE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25°C IC=50A 200A 100A 0 4 8 121620 0 2 4 6 8 10 12 14 16 Gate to Emitter Voltage VGE (V) Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) IC=50A 200A TC=125°C 100A 0 100 200 300 400 0 50 100 150 200 250 300 350 400 Total Gate Charge Qg (nC) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 0 2 4 6 8 10 12 14 16 VCE=300V 200V 100V RL=3.0 TC=25°C 0.1 0.2 0.5 1 2 5 10 20 50 100 200 100 300 1000 3000 10000 30000 Collector to Emitter Voltage VCE (V) Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) Cies Coes Cres VGE=0V f=1MHZ TC=25°C |
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