XL/ML1225

SCR

1

DESCRIPTION

The XL1225/ML1225 silicon controlled rectifiers are high

performance planner diffused PNPN devices. These parts

are intended for low cost high volume applications.

TO-92

1

1:CATHODE

2:GATE

3:ANODE

°C ,unless otherwise specified )

PARAMETERS

PART NO.

SYMBOL

TEST

CONDITION

MIN.

RATING

MAX.

RATING

UNITS

Repetitive Peak Off-State Voltage

XL1225

ML1225

Tj=40 to 125

°C

(rgk=1k

Ω)

400

300

V

On-State Current

IT(RMS)

Tc=40

°C

0.8

A

Average On-State Current

IT(AV)

Half Cycle=180,

Tc=40

°C

0.5

A

Peak Reverse Gate Voltage

IGR=10uA

1

V

Peak Gate Current

IGM

10us Max.

0.1

A

Gate Dissipation

PG(AV)

20ms Max.

150

W

Operating Temperature

Tj

-40

125

°C

Storage Temperature

-40

125

°C

Soldering Temperature

1.6mm from case

10s Max.

250

°C

°C,unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNIT

Off state leakage current

IDRM

Ω), Tj=125°C

0.1

mA

Off state leakage current

IDRM

Ω), Tj=25°C

1.0

µA

On state voltage

VT

AT IT=0.4A

AT IT=0.8A

1.4

2.2

V

On state threshold voltage

VT(TO)

Tj=125

°C

0.95

V

On state slops resistance

Rt

Tj=125

°C

600

m

Gate trigger current

IGT

VD=7V

200

µA

Gate trigger voltage

VGT

VD=7V

0.8

V

Holding current

IH

RGK=1K

Ω

5

mA

Latching current

IL

RGK=1K

Ω

6

mA

Critical rate of voltage rise

DV/DT

VD=0.67*VDRM(RGK=1K

Ω),

Tj=125

°C

V/

µs

Critical rate of current rise

DV/DT

IG=10mA, dIG/dt=0.1A/

µs,

Tj=125

°C

A/

µs

Gate controlled delay time

TGD

IG=10mA, dIG/dt=0.1A/

µs,

500

µs

Commutated turn-off time

TG

Tj=85

°C, VD=0.67*VDRM,

VR=35V, IT=IT(AV)

200

µs