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PHMB300BS12 Datasheet(PDF) 3 Page - Nihon Inter Electronics Corporation |
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PHMB300BS12 Datasheet(HTML) 3 Page - Nihon Inter Electronics Corporation |
3 / 3 page ─ 403 ─ 0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2 Collector Current IC (A) tOFF tf tr(V CE) tON VCC=600V RG=5.1 VGE=±15V TC=25°C Resistive Load Fig. 7 Collector Current Fig. 7 vs. Switching Time(Typical) 310 30 50 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Series Gate Impedance RG ( ) VCC=600V IC=300A VGE=±15V TC=125°C Inductive Load tf tr(I C) ton toff Fig. 10 Series Gate Impedance vs. Switching Time 0123 4 0 100 200 300 400 500 600 Forward Voltage VF (V) (Typical) TC=25°C TC=125°C Fig. 13 Forward Characteristics of Free Fig. 13 Wheeling Diode(Typical) 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 3x10 -4 1x10 -3 3x10 -3 1x10 -2 3x10 -2 1x10 -1 3x10 -1 1 Time t (s) Fig.16- Transient Thermal Impedance TC=25°C 1 Shot Pulse FRD IGBT Fig. 16 Transient Thermal Impedance 310 30 0.03 0.1 0.3 1 3 5 Series Gate Impedance RG ( ) VCC=600V IC=300A VGE=±15V TC=25°C Resistive Load tf tr(V CE) ton toff Fig. 8 Series Gate Impedance Fig. 8 vs. Switching Time(Typical) 0 100 200 300 400 500 0 20 40 60 80 100 120 Collector Current IC (A) EOFF EON VCC=600V RG=5.1 VGE=±15V TC=125°C Inductive Load ERR Fig. 11 Collector Current vs. Switching Loss 0 600 1200 1800 2400 10 -di/dt (A/µs) IRrM trr IF=300A TC=25°C TC=125°C Fig. 14 Reverse Recovery Fig. 14 Characteristics (Typical) 0 50 100 150 200 250 300 350 0.01 0.03 0.1 0.3 1 3 10 Collector Current IC (A) tOFF tf tr(Ic) tON VCC=600V RG=5.1 VGE=±15V TC=125°C Inductive Load Fig. 9 Collector Current vs. Switching Time 310 30 10 30 100 300 Series Gate Impedance RG ( ) EOFF EON VCC=600V IC=300A VGE=±15V TC=125°C Inductive Load ERR Fig. 12 Series Gate Impedance vs. Switching Loss 0 200 400 600 800 1000 1200 1400 0.1 0.3 1 3 10 30 100 300 1000 2000 Collector to Emitter Voltage V CE (V) RG=5.1 , VGE=±15V, TC=125°C Fig. 15 Reverse Bias Safe Operating Area |
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Similar Description - PHMB300BS12 |
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