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PHMB400E6 Datasheet(PDF) 2 Page - Nihon Inter Electronics Corporation

Part # PHMB400E6
Description  IGBT Module-Dual
Download  4 Pages
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Manufacturer  NIEC [Nihon Inter Electronics Corporation]
Direct Link  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PHMB400E6 Datasheet(HTML) 2 Page - Nihon Inter Electronics Corporation

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QS043-402-20393（3/5）
00
日本インター株式会社
ＰＨＭＢ４００Ｅ６
01
23
4
5
0
100
200
300
400
500
600
700
800
Collector to Emitter Voltage VCE (V)
Fig.1- Output Characteristics (Typical)
TC=25°C
11V
10V
VGE=20V
9V
8V
12V
15V
01
23
4
5
0
100
200
300
400
500
600
700
800
Collector to Emitter Voltage VCE (V)
Fig.2- Output Characteristics (Typical)
TC=125°C
11V
10V
VGE=20V
9V
8V
12V
15V
0
4
8
121620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=200A
800A
400A
04
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
IC=200A
800A
TC=125°C
400A
0
200
400
600
800
1000
1200
1400
1600
0
50
100
150
200
250
300
350
400
Total Gate Charge Qg (nC)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
0
2
4
6
8
10
12
14
16
VCE=300V
200V
100V
RL=0.75
TC=25°C
0.1
0.2
0.5
1
2
5
10
20
50
100
200
300
1000
3000
10000
30000
100000
300000
Collector to Emitter Voltage VCE (V)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25°C


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