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PTMB75A6C Datasheet(PDF) 2 Page - Nihon Inter Electronics Corporation

Part # PTMB75A6C
Description  IGBT Module-Six Pack
Download  3 Pages
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Manufacturer  NIEC [Nihon Inter Electronics Corporation]
Direct Link  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PTMB75A6C Datasheet(HTML) 2 Page - Nihon Inter Electronics Corporation

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02
468
10
0
25
50
75
100
125
150
Collector to Emitter Voltage VCE (V)
Fig.1- Output Characteristics (Typical)
TC=25℃
10V
9V
12V
15V
VGE=20V
8V
7V
0
4
8
121620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25℃
75A
IC=30A
150A
0
4
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125℃
75A
IC=30A
150A
0
2
4
6
8
10
12
14
16
0
75
150
225
300
0
50
100
150
200
250
300
350
400
Total Gate Charge Qg (nC)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
VCE=300V
200V
100V
RL=4Ω
TC=25℃
0.2
0.5
1
2
5
10
20
50
100
200
50
100
200
500
1000
2000
5000
10000
20000
50000
Collector to Emitter Voltage VCE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
VGE=0V
f=1MHZ
TC=25℃
Coes
Cres
Cies
0
2040
6080
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Collector Current IC (A)
Fig.6- Collector Current vs. Switching Time (Typical)
toff
VCC=300V
RG=10Ω
VGE=±15V
TC=25℃
ton
tr
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