H1815 datasheet(1/1 Pages) HUASHAN

Part #	H1815

Description	NPN SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

H1815

NPN SILICON TRANSISTOR

█ AUDIO FREQUENCY AMPLIFIER

HIGH FREQUENCY OSC

1―Emitter，E

2―Collector，C

3―Base，B

TO-92

█ ABSOLUTE MAXIMUM RATINGS（T

a=25℃）

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………400mW

VCBO——Collector-Base Voltage………………………………60V

VCEO——Collector-Emitter Voltage……………………………50V

VEBO——Emitter-Base Voltage………………………………5V

IC——Collector Current……………………………………150mA

█ ELECTRICAL CHARACTERISTICS（T

a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

ICBO

Collector Cut-off Current

100

nA

VCB=60V, IE=0

IEBO

Emitter Cut-off Current

100

nA

VEB=5V, IC=0

HFE(1)

DC Current Gain

70

700

VCE=6V, IC=2mA

HFE(2)

25

VCE=6V, IC=150mA

VCE(sat)

Collector- Emitter Saturation Voltage

250

mV

IC=100mA, IB=10mA

VBE(sat)

Base-Emitter Saturation Voltage

1.0

V

IC=100mA, IB=10mA

BVCBO

Collector-Base Breakdown Voltage

60

V

IC=100μA,

IE=0

BVCEO

Collector-Emitter Breakdown Voltage

50

V

IC=1mA,

IB=0

BVEBO

Emitter-Base Breakdown Voltage

5

V

IE=100μA，IC=0

fT

Current Gain-Bandwidth Product

80

MHz

VCE=10V, IC=1mA

█ hFE Classification

O

Y

GR

BL

70—140

120—240

200—400

350—700

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