H3332 datasheet(1/2 Pages) HUASHAN

Part #	H3332

Description	NPN SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

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APPLICATIONS

High Voltage switching Applications.

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ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

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ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO

Collector-Base Breakdown Voltage

180

V

IC=10μA, IE=0

BVCEO

Collector-Emitter Breakdown Voltage

160

V

IC=1mA, IB=0

BVEBO

Emitter-Base Breakdown Voltage

6

V

IE=10μA，IC=0

ICBO

Collector Cut-off Current

0.1

μA

VCB=120V, IE=0

IEBO

Emitter Cut-off Current

0.1

μA

VEB=4V, IC=0

HFE(1)

DC Current Gain

100

400

VCE=5V, IC=100mA

HFE(2)

80

VCE=5V, IC=10mA

VCE(sat)

Collector- Emitter Saturation Voltage

0.12

0.4

V

IC=250mA, IB=25mA

VBE(sat)

Base-Emitter Saturation Voltage

0.85

1.2

V

IC=250mA, IB=25mA

fT

Current Gain-Bandwidth Product

120

MHz

VCE=10V, IC=50mA

Cob

Output Capacitance

8

pF

VCB=10V, IE=0

tON

Turn-on Time

50

nS

tSTG

Storage Time

1000

nS

tF

Fall Time

60

nS

See specified test circuit

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hFE Classification

switching test Circuit：

R

S

T

100—200

140—280

200—400

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………700mW

VCBO——Collector-Base Voltage………………………………180V

VCEO——Collector-Emitter Voltage……………………………160V

VEBO——Emitter-Base Voltage………………………………6V

IC——Collector Current…………………………………………0.7A

ICP——Collector Current（Pulse）…………………………………1.5A

1―Emitter，E

2―Collector，C

3―Base，B

TO-92

H3332

NPN SILICON TRANSISTOR

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