HA114Y datasheet(1/2 Pages) HUASHAN

Part #	HA114Y

Description	PNP SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

█ APPLICATIONS

Switching Circuit，Interface Circuit．

█ ABSOLUTE MAXIMUM RATINGS（T

a=25℃）

█ ELECTRICAL CHARACTERISTICS（T

a=25℃）

Symbol　

Characteristics　

Min　

Typ　

Max　

Unit　

Test Conditions　

BVCBO

Collector-Base Breakdown Voltage

－５０　

Ｖ　

IC=-10μA,

IE=0

BVCEO

Collector-Emitter Breakdown Voltage

－５０　

Ｖ　

IC=-1mA,

IB=0　

ICBO

Collector Cut-off Current

－０．１　

μＡ　 VCB=-40V, IE=0

ICEO

Collector Cut-off Current

－０．５　

μＡ　 VCE=-40V, IB=0

IEBO

Emitter Cut-off Current

－６７　

－８８　

－１２５　

μＡ　 VEB=-5V, IC=0

HFE　

DC Current Gain　

３０　

VCE=-5V, IC=-5mA　

VCE(sat)　

Collector- Emitter Saturation Voltage　

－０．１　－０．３　

Ｖ　

IC=-10mA, IB=-0.5mA　

ＶＩ（ｏｆｆ）　Ｉｎｐｕｔ　Ｏｆｆ　Ｖｏｌｔａｇｅ　

－０．５　－０．７　－０．９　

Ｖ　

VCE=-5V, IC=-0.1mA　

ＶＩ（ｏｎ）

Ｉｎｐｕｔ　Ｏｎ　Ｖｏｌｔａｇｅ

－１．０　－２．０　－４．０　

Ｖ　

VCE=-0.2V, IC=-10mA

R1

Ｉｎｐｕｔ　Ｒｅｓｉｓｔｏｒ

７．０　

１０　

１３　

Ｋｏｈｍ　　

R1/ R2

Ｒｅｓｉｓｔｏｒ　Ｒａｔｉｏ

０．１９３　０．２１３　０．２３４　

fT

Current Gain- Bandwidth Product

２５０　

ＭＨｚ　 VCE=-10V, IC=-5mA

Cob

Output Capacitance

５．５　

ｐＦ　 VCB=-10V, f=1ＭＨｚ

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………300mW

VCBO——Collector-Base Voltage………………………………-50V

VCEO——Collector-Emitter Voltage……………………………-50V

VEBO ——Emitter-Base Voltage………………………………-6V

IC——Collector Current……………………………………-100mA

1―Emitter，E

2―Collector，C

3―Base，B

TO-92S

HA114Y

PNP DIGITAL TRANSISTOR

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