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VG26VS17400E Datasheet(PDF) 5 Page - Vanguard International Semiconductor |
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VG26VS17400E Datasheet(HTML) 5 Page - Vanguard International Semiconductor |
5 / 25 page Document : 1G5-0142 Rev.1 Page 5 VIS VG26(V)(S)17400E 4,194,304 x 4 - Bit CMOS Dynamic RAM Absolute Maximum Rating Recommended DC Operating Conditions Capacitance Ta = 25°C, VCC = % or %, f = 1MHz Note : 1. Capacitance measured with effective capacitance measuring method. 2. CAS = VIH to disable Dout. Parameter Symbol Value Unit Voltage on any pin relative to Vss 5V 3.3V VT -1.0 to + 7.0 -0.5 to + 4.6 V Supply voltage relative to Vss 5V 3.3V Vcc -1.0 to + 7.0 -0.5 to + 4.6 V Short circuit output current IOUT 50 mA Power dissipation PD 1.0 W Operating temperature TOPT 0 to + 70 °C Storage temperature TSTG -55 to + 125 °C Parameter/Condition Symbol 5 Volt Version 3.3 Volt Version Unit Min Typ Max Min Typ Max Supply Voltage Vcc 4.5 5.0 5.5 3.0 3.3 3.6 V Input High Voltage, all inputs VIH 2.4 - VCC + 1.0 2.0 - VCC + 0.3 V Input Low Voltage, all inputs VIL -1.0 - 0.8 -0.3 - 0.8 V Parameter Symbol Typ Max Unit Note Input capacitance (Address) Cl1 - 5 pF 1 Input capacitance (RAS, CAS, OE, WE) Cl2 - 7 pF 1 Output capacitance (Data - in, Data - out) CI/O - 7 pF 1,2 5V 10 ± 3.3V 10 ± |
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