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VG3617161ET-6 Datasheet(PDF) 6 Page - Vanguard International Semiconductor

Part # VG3617161ET-6
Description  CMOS Synchronous Dynamic RAM
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Manufacturer  VML [Vanguard International Semiconductor]
Direct Link  http://www.vis.com.tw
Logo VML - Vanguard International Semiconductor

VG3617161ET-6 Datasheet(HTML) 6 Page - Vanguard International Semiconductor

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Document:1G5-0189
Rev.1
Page 6
VIS
VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
A.C Characteristics: (6)(7)(8)(10)
(VDD=3.3V
, VSS=0V, Ta=0 to 70°C)
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
2. All voltages are referenced to VSS.
3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tCK
and tRC.
4. These parameters depend on the output loading. Specified values are obtained with the outputs open.
5. Assume minimum column address update cycle tCCD (min).
Symbol
A.C. Parameter
-6
-7
-8
Unit
Note
Min
Max
Min
Max
Min
Max
tCH
Clock high time
2.5
2.5
3
ns
tCL
Clock low time
2.5
2.5
3
tT
Transition time (Rise and Fall)
0.5
10
0.5
10
0.5
10
tCK3
Clock cycle time
CL* = 3
6
7
8
tCK2
CL* = 2
8
10
12
tIS
Address/Control Input setup time
1.5
1.75
2
tIH
Address/Control Input hold time
1
1
1
tDS
Data Input setup time
1.5
1.75
2
tDH
Data Input hold time
1
1
1
tLZ
Data output low impedance
1
1
1
tHZ3
Data output high imped-
ance
CL* = 3
5.5
5.5
6
9
tHZ2
CL* = 2
6
7
7
9
tAC3
Access time from CLK
(positive edge)
CL* = 3
5.5
6
6
tAC2
CL* = 2
6
7
7
tOH
Data output hold time
2.3
2.5
2.5
tRCD
RAS to CAS delay
18
20
20
tRRD
Row activate to row activate delay
12
14
16
tCCD
CAS to CAS Delay time
1
1
1
CLK
tDPL
Last data in to precharge
2
2
2
CLK
tRAS
Row activate to precharge time
36
100,000
42
100,000
48
100,000
ns
tRP
Precharge to refresh/row activate
command
3
3
3
CLK
tDAL3
Data-in to ACT (REF) Command (CL = 3)
5
5
5
CLK
tDAL2
Data-in to ACT (REF) Command (CL = 2)
5
5
5
CLK
tRC
Row cycle time
54
63
72
ns
tRSC
Mode Register Set Cycle time
2
2
2
CLK
tREF
Refresh time
64
64
64
ms
tSRX
Minimum CKE ”High”for Self-Refresh exit
1
1
1
CLK
tBDL
Last data in to burst STOP command
1
1
1
CLK
tPDE
Power Down Exit set-up time
1
1
1
CLK
0.3V
±


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