C-band InGaAsP strained MQW FP LD TO

Description

KLT-4CB413G is long wavelength Fabry-Perot AR LD source in TO-56 package with flat window cap.

KLT-4CB413G consists of an InGaAsP strained multi-quantum well(MQW) laser diode and an InGaAs

PIN-PD for output monitoring. It at C-band(1529~1559 nm) wavelength band and with data rate of 1.25Gbps.

It is suitable for fabricating pigtailed LD source, TOSA(transmitter optical sub assembly)

FEATURES

●

High performance strained MQW InGaAsP LD with BH(buried hetero-junction) structure

●

Hermetically sealed TO-56 package with flat window cap

●

High reliability and environmental endurance

●

Operating wavelength of C-band(1530~1560 nm)

●

Wide operating temperature range from 0℃ to 70℃

●

Data rates of 1.25Gbps

APPLICATIONS

●

SONET OC-1~ OC-48/SDH STM-1 ~ STM-16

●

155 Mbps, 622Mbps, and 1.25Gbps for WDM PON

●

Suitable for fabrication of coaxial LD module, TOSA

Absolute Maximum Ratings

Operating temperature

Storage temperature

Peak laser output power

Peak reverse laser voltage

Peak forward monitor PD current

Peak reverse monitor PD voltage

Optical and Electrical Characteristics (KLT-4CB413G, Top = 25 ℃ otherwise specified)

Operating temperature

℃

Threshold current

CW, kink free

Operating current

CW, Po=3mW

Slope efficiency

CW, Po=3mW

Operating voltage

at rated Po=3mW

Center wavelength

at rated Po=3mW

RMS spectral width

at rated Po=3mW

Monitor PD current

Monitor PD dark current

Monitor PD capacitance

Specifications are subject to change without notice.

1/2

Rev. 001

KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea

KLT-4CB413G

Test Conditions

Parameter

Symbol

Min

Max

unit

0

70

℃

-20

85

℃

8

mW

2

V

2

mA

20

V

Parameter

Symbol

Min

Typ

Max

Unit

0

70

13

20

mA

Iop

28

32

η

0.19

0.21

1

1550

1555

1560

nm

12

1.5

V

nm

Optical rise and fall time

∆λ

0.2

ns

0.1

0.2

ns

0.1

mA

0.1

uA

0.1

0.11

10

20

pF