HX789A datasheet(1/2 Pages) HUASHAN

Part #	HX789A

Description	PNP SILICON TRANSISTOR

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Manufacturer	HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]

Direct Link	http://www.huashan.com.cn

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Shantou Huashan Electronic Devices Co.,Ltd.

█ APPLICATIONS

Motor drivers.

█ ABSOLUTE MAXIMUM RATINGS（T

a=25℃）

█ ELECTRICAL CHARACTERISTICS（T

a=25℃）

Symbol　

Characteristics　

Min　

Typ　

Max　

Unit　

Test Conditions　

BVCBO

Collector-Base Breakdown Voltage

－２５　

Ｖ　

ＩＣ＝－１００μＡ，ＩＥ＝０　

BVCEO

Collector-Emitter Breakdown Voltage

－２５　

Ｖ　

ＩＣ＝－１０ｍＡ，ＩＢ＝０　

BVEBO

Emitter- Base Breakdown Voltage

－５　

Ｖ　

ＩＥ＝－１００μＡ，ＩＣ＝０　

ICBO

Collector Cut-off Current

－０．１　

μＡ　ＶＣＢ＝－１５Ｖ，　ＩＥ＝０　

IEBO

Emitter Cut-off Current

－０．１　

μＡ　ＶＥＢ＝－４Ｖ，　ＩＣ＝０　

HFE　

DC Current Gain　

２５０　

４９０　

ＶＣＥ＝－２Ｖ，　ＩＣ＝－１Ａ　

VCE(sat1)　 Collector- Emitter Saturation Voltage　

－０．２５　

Ｖ　

ＩＣ＝－１Ａ，　ＩＢ＝－１０ｍＡ　

VCE(sat2)　　

－０．４５　

Ｖ　

ＩＣ＝－２Ａ，　ＩＢ＝－２０ｍＡ　

VCE(sat3)

－０．５　

Ｖ　

ＩＣ＝－３Ａ，　ＩＢ＝－１００ｍＡ　

VBE(sat)　 Base-Emitter Saturation Voltage　

－１．０　

Ｖ　

ＩＣ＝－１Ａ，　ＩＢ＝－１０ｍＡ　

VBE(on)

Base-Emitter On Voltage

－０．８　　

Ｖ　

ＶＣＥ＝－２Ｖ，　ＩＣ＝－１Ａ　

fT

Current Gain-Bandwidth Product

１００　

ＭＨｚ　ＶＣＥ＝－５Ｖ，ＩＣ＝－５０ｍＡ，ｆ＝５０ＭＨｚ　

Cob

Output Capacitance

２５　

ｐＦ　

ＶＣＢ＝－１０Ｖ，ＩＥ＝０，ｆ＝１ＭＨｚ　

Tstg——Storage Temperature………………………… -55~150℃

Tj——Junction Temperature…………………………………150℃

PC——Collector Dissipation …………………………………1.5W

VCBO——Collector-Base Voltage………………………………-25V

VCEO——Collector-Emitter Voltage……………………………-25V

VEBO ——Emitter-Base Voltage………………………………-5V

I C——Collector Current………………………………………-3A

1―Emitter，E

2―Base，B

3―Collector，C

TO-92

HX789A

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