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APT2X31DC120J Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APT2X31DC120J
Description  ISOTOP짰 SiC Diode Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT2X31DC120J Datasheet(HTML) 2 Page - Microsemi Corporation

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APT2X31DC120J
APT2X30DC120J
www.microsemi.com
2 – 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics (per leg)
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 30A
Tj = 175°C
2.3
3.0
V
Tj = 25°C
96
600
IRM
Maximum Reverse Leakage Current
VR = 1200V
Tj = 175°C
168
3000
µA
QC
Total Capacitive Charge
IF = 30A, VR = 600V
di/dt =1500A/µs
120
nC
f = 1MHz, VR = 200V
288
C
Total Capacitance
f = 1MHz, VR = 400V
207
pF
Thermal and package characteristics (per leg)
Symbol
Characteristic
Min
Typ
Max
Unit
RthJC
Junction to Case Thermal resistance
0.53
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG
Storage Temperature Range
-55
175
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
SOT-227 (ISOTOP
®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
4
2
1
3


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