APTC60AM35T1G

www.microsemi.com

6 – 6

1

10

100

1000

0.3

0.5

0.7

0.9

1.1

1.3

1.5

Source to Drain Diode Forward Voltage

Delay Times vs Current

td(on)

td(off)

0

50

100

150

200

250

300

350

0

20

40

60

80

100 120

L=100µH

Rise and Fall times vs Current

0

20

40

60

80

100

120

0

20

40

60

80

100

120

L=100µH

Switching Energy vs Current

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

0

20

40

60

80

100

120

L=100µH

0

2

4

6

8

10

0

5

10

15

20

25

Gate Resistance (Ohms)

Switching Energy vs Gate Resistance

L=100µH

hard

switching

ZCS

ZVS

0

20

40

60

80

100

120

140

15 20 25 30 35 40 45 50 55 60 65

Operating Frequency vs Drain Current

D=50%

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.